THE INFLUENCE OF SURFACE TEXTURE AND THERMAL TREATMENT ON THE PERFORMANCE OF LASER-ANNEALED SILICON SOLAR CELLSSINKE W; HOONHOUT D; SARIS FW et al.1982; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 4/1982/STRESA; NLD/USA/GBR; DORDRECHT; BOSTON; LONDON: D. REIDEL PUBLISHING COMPANY; DA. 1982; PP. 1029-1033; BIBL. 5 REF.Conference Paper

Multicrystalline silicon solar cellsSINKE, W. C.Advances in science and technology. 1999, pp 597-608, isbn 88-86538-25-1Conference Paper

Aspects of silicon crystallizationSINKE, W. C; ROORDA, S.Journal of crystal growth. 1990, Vol 99, Num 1-4, pp 222-228, issn 0022-0248, 1Conference Paper

Optimization of polycrystalline silicon solar cells produced by ion-implantation and pulsed laser annealingSINKE, W; VAN SARK, W; DOORN, S et al.Solar energy R & D in the European community. Series C. Photovoltaic power generation. 1983, Vol 3, pp 62-66Article

Tungsten deposition on GaAs using WF₆ and atomic hydrogenVAN MAAREN, A. J. P; SINKE, W. C.Journal of applied physics. 1993, Vol 73, Num 4, pp 1989-1992, issn 0021-8979Article

Transient structural relaxation of amorphous siliconSINKE, W; WARABISAKO, T; MIYAO, M et al.Journal of non-crystalline solids. 1988, Vol 99, Num 2-3, pp 308-323, issn 0022-3093Article

Electron irradiation-activated low-temperature annealing of phosphorus-implanted siliconMIYAO, M; POLMAN, A; SINKE, W et al.Applied physics letters. 1986, Vol 48, Num 17, pp 1132-1134, issn 0003-6951Article

Direct observation of resolidification from the surface upon pulsed-laser melting of amorphous siliconBRUINES, J. J. P; VAN HAL, R. P. M; BOOTS, H. M. J et al.Applied physics letters. 1986, Vol 48, Num 19, pp 1252-1254, issn 0003-6951Article

Polysilicon solar cells made by ion implantation and pulsed laser annealingSINKE, W; VAN SARK, H; DOORN, S et al.Photovoltaic solar energy conference. 5. 1984, pp 1095-1103Conference Paper

A comparison between excimer laser and thermal annealing for ion-implanted polycrystalline silicon solar cellsSINKE, W; POLMAN, A; SARIS, F. W et al.Solar cells. 1987, Vol 20, Num 1, pp 51-57, issn 0379-6787Article

A new method for the evaluation of solar cell parametersPOLMAN, A; VAN SARK, W. G. J. H. M; SINKE, W et al.Solar cells. 1986, Vol 17, Num 2-3, pp 241-251, issn 0379-6787Article

Monitory-carrier transport in nonuniformly doped silicon ― An analytical approachVERHOEF, L. A; SINKE, W. C.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 1, pp 210-221, issn 0018-9383, 12 p.Article

Experimental test of kinetic theories for heterogeneous freezing in siliconSTOLK, P. A; POLMAN, A; SINKE, W. C et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 1, pp 5-13, issn 0163-1829Article

Low-temperature SOI (Si-on-insulator) formation by lateral solid-phase epitaxyMIYAO, M; MONIWA, M; KUSUKAWA, K et al.Journal of applied physics. 1988, Vol 64, Num 6, pp 3018-3023, issn 0021-8979Article

Mesotaxy by nickel diffusion into a buried amorphous silicon layerEROKHIN, Y. N; GRÖTZSCHEL, R; OKTYABRSKY, S. R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1992, Vol 12, Num 1-2, pp 103-106Conference Paper

Quench rate enhancement in pulsed melting of Si by processing under waterPOLMAN, A; SINKE, W; SARIS, F. W et al.Applied physics letters. 1988, Vol 52, Num 7, pp 535-537, issn 0003-6951Article

Oxygen in titanium nitride diffusion barriersSINKE, W; FRIJLINK, G. P. A; SARIS, F. W et al.Applied physics letters. 1985, Vol 47, Num 5, pp 471-473, issn 0003-6951Article

Nucleation and deposition of W on GaAs by excimer laser-assisted chemical vapor depositionVAN MAAREN, A. J. P; SINKE, W. C; FLICSTEIN, J et al.Journal of applied physics. 1993, Vol 73, Num 4, pp 1981-1988, issn 0021-8979Article

Triggering explosive crystallization of amorphous siliconPOLMAN, A; ROORDA, S; STOLK, P. A et al.Journal of crystal growth. 1991, Vol 108, Num 1-2, pp 114-120, issn 0022-0248Article

Alkaline etching for reflectance reduction in multicrystalline silicon solar cellsHYLTON, J. D; BURGERS, A. R; SINKE, W. C et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 6, pp G408-G427, issn 0013-4651Article

The effect of material inhomogeneities on the characteristics of semicrystalline silicon solar cells : the second diodeMIJNARENDS, P. E; JANSSEN, G. J. M; SINKE, W. C et al.Solar energy materials and solar cells. 1994, Vol 33, Num 3, pp 345-360, issn 0927-0248Article

The impact of silicon feedstock on the PV module costDEL COSO, G; DEL CANIZO, C; SINKE, W. C et al.Solar energy materials and solar cells. 2010, Vol 94, Num 2, pp 345-349, issn 0927-0248, 5 p.Article

An analytical solution for the collection efficiency of solar-cell emitters with arbitrary doping profileBISSCHOP, F. J; VERHOEF, L. A; SINKE, W. C et al.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 2, pp 358-364, issn 0018-9383Article

Crystalline Silicon Solar Module Technology : Towards the 1 Euros Per Watt-Peak GoalDEL CANIZO, C; DEL COSO, G; SINKE, W. C et al.Progress in photovoltaics (Print). 2009, Vol 17, Num 3, pp 199-209, issn 1062-7995, 11 p.Article

Silicon consumption in excimer-laser-assisted chemical vapour deposition of tungstenVAN MAAREN, A. J. P; ZAGWIJN, P. M; SINKE, W. C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1991, Vol 8, Num 3, pp 181-188Article